Effective Carrier Measurement Device (PAN SOLUTION JAPAN) A new evaluation technology HS-CMR Method (Hi Speed-Current Modulating Resistivity Method) Unique technology for measuring effective carrier number by dynamic resistivity measurement. The HS-CMR method is new crystal quality measurement technology developed from the Institute for Materials Research, Tohoku University. The HS-CMR does not use carrier lifetime mapping or diffusion length mapping that has been used in the past, and has been designed by comprehensively considering various problems caused by the thermal processes of semiconductor crystal wafers and subsequent device manufacturing processes.
The HS-CMR method uses the four-point probe method to measure the resistivity while changimg the current with our own proprietary algorithm. With this method, the HS-CMRmethod can measure the “effective resistivity”. The effective resistivity is a value that reflects the total number of minority carriers and majority carriers that are not trapped by crystal defects or impurities. The HS-CMR method can obtain a single quality factor that accurately reflects the quality of the wafer by comprehensively analyzing the transition of the resistivity and the effective resistivity.
The measured values obtained by the HS-CMR method can be used to improve and develop crystal growth and device processes.